Description
PPA322B HIEE300016R2 HIEE400235R1 is the combined name of (gate commutator thyristor) and integrated gate drive circuit. It has the high blocking ability of GTO,
low on-state voltage drop, and the same switching performance as . It is a kind of ideal megawatt level, medium voltage switching device. Widely used in high power
medium voltage converter. The basic working principle is as follows:
When operating in the on-state, is a positive feedback switch like a thyristor, which is characterized by strong current-carrying capacity and reduced on-state voltage.
In the off state, the pn junction between the gate and cathode enters the reverse bias in advance, and effectively exits the work, and the whole device works in a
transistor mode. When the equivalent circuit in these two states is off, the P base n emitter is reversed by opening a switch in series with the cathode
This quickly prevents cathode injection and forces the overall anode current to be converted into a gate current (usually within lμs), thus transforming the GTO into a
contactless base region PNP transistor, eliminating the cathode emitter contraction effect. As a result, its maximum turn-off current is much higher than the rated current
of conventional Gtos. Because IGCT is turned off at gain close to 1, the protective absorption circuit can be omitted. The so-called“GTO” state can be avoided because
the anode current is turned off in transistor mode in an open base state. The turn-off process allows a higher anode voltage rise rate, and the turn-off action is very
reliable. Therefore, IGCT combines the low-pass voltage drop and high blocking voltage of the thyristor with the stable turn-off characteristics of the transistor. It is an
ideal high power semiconductor switching device. Because the gate drive circuit must quickly transfer all positive current during the shutdown process.
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